T.P. Smith III, B.B. Goldberg, et al.
Surface Science
Paper
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
Abstract
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
Related
S. Washburn, R.A. Webb, et al.
Physical Review B
R. Tsu, L. Esaki
Applied Physics Letters
L.M. Claessen, J.C. Maan, et al.
Superlattices and Microstructures