E. Deleporte, G. Peter, et al.
Surface Science
Paper
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
Abstract
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
Related
P.J. Stiles, M.H. Brodsky
Solid State Communications
G.A. Sai-Halasz, L.L. Chang, et al.
Solid State Communications
M. Fritze, W. Chen, et al.
Surface Science