L. Esaki, L.L. Chang, et al.
Physical Review
Paper
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
Abstract
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
Related
G. Bastard, E. Mendez, et al.
Physical Review B
Yia-Chung Chang, L.L. Chang, et al.
Applied Physics Letters
R.J. Haug, H. Munekata, et al.
Surface Science