L.L. Chang, E. Mendez, et al.
ICPS Physics of Semiconductors 1984
Paper
GeTeSingle Bond signGaAs tunnel junction: A negative-resistance schottky-type barrier
Abstract
Tunnel junctions are fabricated by evaporating GeTe on GaAs substrates. The current-voltage characteristics are similar to those in a Schottky barrier, except for the existence of a negative-resistance region. A simple model which predicts such behavior is analyzed to interpret the experimental results. © 1969 The American Institute of Physics.
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