Geiger mode operation of an In_0.53Ga_0.47As-In_0.52Al_0.48As avalanche photodiode

Low-temperature photon counting with gated mode quenching is demonstrated with separate absorption, charge, and multiplication avalanche photodiodes that have an In0.52Al0.48As multiplication layer. A minimum of ten dark counts per second and single-photon detection efficiency of 16% were achieved at 130 K.