Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
Results for the optical gain coefficient as a function of the nominal current density are given for GaAs lasers with compensated n-type active layers and with undoped active layers. The results suggest that n-type layers may give lower threshold currents near room temperature than do comparable p-type layers. © 1973, IEEE. All rights reserved.
Xikun Hu, Wenlin Liu, et al.
IEEE J-STARS
J. Paraszczak, J.M. Shaw, et al.
Micro and Nano Engineering
Thomas E. Karis, C. Mark Seymour, et al.
Rheologica Acta
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Solid State Communications