Fully depleted SOI (FDSOI) technology

Kangguo Cheng; Ali Khakifirooz

doi:10.1007/s11432-016-5561-5

Science China Information Sciences

Review

25 Apr 2016

Fully depleted SOI (FDSOI) technology

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Abstract

Fully depleted SOI (FDSOI) has become a viable technology not only for continued CMOS scaling to 22 nm node and beyond but also for improving the performances of legacy technology when retrofitting to old technology nodes. In this paper, we provide an overview of FDSOI technology, including the benefits and challenges in FDSOI design, manufacturing, and ecosystem. We articulate that FDSOI is potential cornerstone for China to catch up and leapfrog in semiconductor technology.

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