Frequency doubling in KB5O84H2O and NH4B5O84H2O to 217.3 nm

C.F. Dewey Jr.; W.R. Cook Jr.; R.T. Hodgson; J.J. Wynne

doi:10.1063/1.88047

Applied Physics Letters

Paper

02 Sep 2008

Frequency doubling in KB₅O₈4H₂O and NH₄B₅O₈4H₂O to 217.3 nm

View publication

Abstract

We have produced tunable phase-matched second-harmonic radiation in a KB5O84H2O crystal between 217.3 and 234.5 nm. Phase matching was achieved by crystal rotation. We also studied frequency doubling in NH4B5O84H2O.

Paper

WA-B2 Improved High-Energy Response of Ga_1-xAl_xAs-GaAs Solar Cells Using Fluorescent Capping Layers

H.J. Hovel, R.T. Hodgson, et al.

IEEE T-ED

Paper

High-frequency operation of heavily carbon-doped Ga_0.51In _0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy

T.J. De Lyon, J. Woodall, et al.

Applied Physics Letters

Conference paper

RAPID ANNEALING OF SILICON.

R.T. Hodgson, V.R. Deline, et al.

MRS Proceedings 1983

Paper

Excitation of vacuum ultraviolet emission from high-pressure xenon by relativistic electron beams

Stephen C. Wallace, R.T. Hodgson, et al.

Applied Physics Letters

View all publications

Abstract

Related

WA-B2 Improved High-Energy Response of Ga1-xAlxAs-GaAs Solar Cells Using Fluorescent Capping Layers

High-frequency operation of heavily carbon-doped Ga0.51In 0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy

RAPID ANNEALING OF SILICON.

Excitation of vacuum ultraviolet emission from high-pressure xenon by relativistic electron beams

WA-B2 Improved High-Energy Response of Ga_1-xAl_xAs-GaAs Solar Cells Using Fluorescent Capping Layers

High-frequency operation of heavily carbon-doped Ga_0.51In _0.49P/GaAs surface-emitting light-emitting diodes grown by metalorganic molecular beam epitaxy