R.M. Feenstra
Semiconductor Science and Technology
Antimony overlayers on the GaAs(110) surface have been studied by scanning tunneling microscopy and spectroscopy. On ordered Sb terraces, a characteristic spectrum of surface states is observed. Near the edges of Sb islands, additional states are found within the band-gap region. These band-gap states comprise two separate bands of filled and empty states, with the surface Fermi level pinned between the two bands. © 1988 The American Physical Society.
R.M. Feenstra
Semiconductor Science and Technology
R.M. Feenstra, G.S. Oehrlein
Applied Physics Letters
R.M. Feenstra, Joseph A. Stroscio
Physical Review Letters
R.S. Goldman, R.M. Feenstra, et al.
Journal of Electronic Materials