PaperNanowire metal-oxide-semiconductor field effect transistor with doped epitaxial contacts for source and drainG.M. Cohen, M.J. Rooks, et al.Applied Physics Letters
Conference paperMonte Carlo study of sub-band-gap impact ionization in small silicon field-effect transistorsM.V. Fischetti, S.E. LauxIEDM 1995
Conference paperSimulation study of Ge n-channel 7.5 nm DGFETs of arbitrary crystallographic alignmentS.E. LauxIEDM 2004
PaperSEMICONDUCTOR DEVICE SIMULATION USING GENERALIZED MOBILITY MODELS.S.E. Laux, Robert G. ByrnesIBM J. Res. Dev
