Conference paperBand-edge high-performance high-κ /metal gate n-MOSFETs using cap layers containing group IIA and IIIB elements with gate-first processing for 45 nm and beyondV. Narayanan, V.K. Paruchuri, et al.VLSI Technology 2006
Conference paperMaterials and process integration issues in metal gate/high-k stacks and their dependence on device performanceA.C. Callegari, K. Babich, et al.ECS Meeting 2007
PaperDirect determination of local lattice polarity in crystalsK.A. Mkhoyan, P.E. Batson, et al.Science