Evidence for the intrinsic nature of light-induced defects in undoped a-Si:H

Absorption measurements using photothermal deflection spectroscopy were performed on a series of a-Si films with various levels of typical impurities to investigate their role in light-induced defect formation. It was found that at low concentrations (<5 at. %) the light-induced defect creation rate is independent of impurity concentration for oxygen, nitrogen, and carbon, which agrees with electron-spin-resonance results. © 1988 The American Physical Society.