Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
EPR of Rh2+ (4d7), Rh4+ (4d5), Os3+ (5d5), Os5+ (5d3) and Ir4+ (5d5) have been observed in doped-rutile crystals grown by vapor transport. All the nd5 ions are in their high-field, low-spin, states with orbital angular momentum-reduction factors between 0.85 and 0.36. The Os5+ (5d3) ground state is characterized by a large axial field splitting. Ir4+ is very stable in TiO2 and its optical absorption spectrum is reported. © 1986.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Michiel Sprik
Journal of Physics Condensed Matter
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
Kigook Song, Robert D. Miller, et al.
Macromolecules