Epitaxially grown molybdenum thin films deposited by laser ablation on (100) MgO substrates

We report here on the deposition process by laser ablation and on the characterization of molybdenum films epitaxially grown on (100)MgO single-crystal substrates. The 50 nm (100)Mo films are epitaxied. These films have a low resistivity ( ∼ 5.3 μΩ cm at 273 K) close to the pure molybdenum resistivity value (4.85 μΩ cm at 273 K). The low resistivity corroborates the quality of the Mo films in spite of a very low deposition rate (∼25 nm h-1). An other orientation has been also encountered. The complementary characterization methods (X-ray diffraction in θ-2θ or oscillating crystal mode, reflection high-energy electron diffraction and electron channelling patterns) have shown it to be the (110)Mo orientation.