B.A. Hutchins, T.N. Rhodin, et al.
Surface Science
Paper
Energy levels in quasi uni-dimensional semiconductor heterostructures
Abstract
We report calculations of valence levels in quasi one-dimensional semiconductor heterostructures. Subband mixing is considered and the subband dispersions along the wire-axis direction are calculated for GaAs Ga(Al)As quantum wires. © 1987.
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