K.A. Chao
Physical Review B
Paper
Electronic Mobility in Semiconductor Heterostructures
Abstract
Recent developments in the study of the electronic mobil-ity of two-dimensional (2-D) systems in semiconductor heterostructures are reviewed. The emphasis is on a comparison between theories and experimental data on the mobilities of 2-D electrons and holes in GaAs-GaAlAs heterojunctions. Copyright © 1986 by The Institute of Electrical and Electronics Engineers, Inc.
Related
Sung Ho Kim, Oun-Ho Park, et al.
Small
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures