R.D. Murphy, R.O. Watts
Journal of Low Temperature Physics
Paper
Electronic effect on the debye temperature of N-type silicon
Abstract
Analysis of recently published measurements of the specific heat of heavily doped n-type silicon reveals a dependence of the Debye temperature on doping. © 1978.
Related
T. Schneider, E. Stoll
Physical Review B
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures