Conference paper
Modeling polarization for Hyper-NA lithography tools and masks
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
Paper
Electronic effect on the debye temperature of N-type silicon
Abstract
Analysis of recently published measurements of the specific heat of heavily doped n-type silicon reveals a dependence of the Debye temperature on doping. © 1978.
Related
R.W. Gammon, E. Courtens, et al.
Physical Review B
T. Schneider, E. Stoll
Physical Review B
J.C. Marinace
JES