A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
The atomic origins of the intrinsic surface states of the Si(111)-(7 × 7) and Si(001) surfaces have been identified using the recently developed method of current imaging tunneling spectroscopy (CITS). On Si(111)-(7 × 7) three filled and two empty surface states are found and directly identified with atomic features of the dimer-adatom-stacking fault model. On Si(001) one filled and one empty state are observed and identified with atomic features of a dimer model. The STM images of Si(001) are shown to be dominated by the surface electronic structure rather than geometric structure. © 1987.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures