A. Krol, C.J. Sher, et al.
Surface Science
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
A. Krol, C.J. Sher, et al.
Surface Science
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Biancun Xie, Madhavan Swaminathan, et al.
EMC 2011
O.F. Schirmer, W. Berlinger, et al.
Solid State Communications