Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
We obtained a measure for τR, the electron-hole recombination time in bismuth, from 2-20°K. The value of τR at 4.8°K is 6 × 10-9 sec and decreases exponentially as the temperature increases with an activation energy of 42°K. The results were obtained from measurements of the Acoustomagnetoelectric effect (AME) at 11.3 and 29.5 Mc. An ancillary result is a T-2 dependence for the trigonal hole mobility above 8°K. © 1966.
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021
Lawrence Suchow, Norman R. Stemple
JES
Ranulfo Allen, John Baglin, et al.
J. Photopolym. Sci. Tech.
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films