J.H. Stathis, R. Bolam, et al.
INFOS 2005
Electron-energy-loss spectra recorded from very small volumes of diamond containing individual dislocations show extra intensity within the band gap just below the 1sto conduction-band threshold energy, when compared to spectra recorded from neighboring defect-free regions. This is interpreted as direct evidence for the presence of vacant defect states associated with the dislocation structure. The contribution of the * states from the surface layers to this region of the spectra is completely removed by calculating the difference between the spectra recorded on and off the defect. © 1989 The American Physical Society.
J.H. Stathis, R. Bolam, et al.
INFOS 2005
E. Burstein
Ferroelectrics
Sang-Min Park, Mark P. Stoykovich, et al.
Advanced Materials
Thomas H. Baum, Carl E. Larson, et al.
Journal of Organometallic Chemistry