D. Van Der Marel, A.J. Leggett, et al.
Physical Review B - CMMP
Paper
Electroluminescence emission from indium oxide and indium-tin-oxide
Abstract
Electroluminescence emission from indium-tin-oxide (ITO) and indium oxide films incorporated in a Si-rich SiO2-SiO2-ITO (In 2O3) multiple-layer structure is reported. The light emitted has a peak at approximately 3.3 eV for ITO and at 2.6 eV for In 2O3. The intensity of the light is found to depend on the applied electric field.
Related
Conference paper
Advanced sensors for scanning SQUID microscopy
J.R. Kirtley, G.W. Gibson, et al.
IEEE-ISEC 2013
J.R. Kirtley, C.C. Tsuei, et al.
Turkish Journal of Physics
D.J. Dimaria
Solid-State Electronics