Electroluminescence and photoluminescence of GaAs at 77°K

The electroluminescence from forward biased GaAs p-n junctions is compared with the photoluminescence of bulk homogeneously doped samples of GaAs. It is found that in the region of the absorption edge at 1.48 eV, the electroluminescence is similar to the p-type photoluminescence, while at lower photon energy the electroluminescence is similar to the n-type photoluminescence. The results show that centers responsible for the low-energy electroluminescence are present in the substrate and not introduced during the diffusion. © 1963 The American Physical Society.