Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Paper
Electric field dependence of the dielectric susceptibility in K1-xLixTaO3
Abstract
Results are presented for the dielectric function ε* = ε1 + iε2 in K1-xLixTaO3 in the frequency range 10 < f < 106 Hz and for several fields. The data are analysed in terms of dielectric relaxation, and it is shown that the electric bias field modifies the relaxation behaviour drastically. © 1984.
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