PaperHigh carbon doping efficiency of bromomethanes in gas source molecular beam epitaxial growth of GaAs
PaperDoping concentration dependence of radiance and optical modulation bandwidth in carbon-doped Ga0.51In0.49P/GaAs light-emitting diodes grown by gas source molecular beam epitaxy
PaperHighly carbon-doped p-type Ga0.5In0.5As and Ga 0.5In0.5P by carbon tetrachloride in gas-source molecular beam epitaxy
Conference paperSurface fermi level engineering - Or there's more to schottky barriers than just the arguments among physicists
