X. Yin, H.-M. Chen, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Paper
Effects of N2, O2, and H2O on GaAs passivated by photowashing or coating with Na2S⊙9H2O
Abstract
The photoluminescence (PL) from the surface region of GaAs passivated by photowashing or coating with Na2S⊙9H2O is shown to be sensitive to the gas ambient. Both water vapor and oxygen must be present in order to obtain a large PL signal. The effects are activated by the measuring laser light.
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