Revanth Kodoru, Atanu Saha, et al.
arXiv
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
Revanth Kodoru, Atanu Saha, et al.
arXiv
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021