J. Tersoff
Applied Surface Science
Impurities and structural defects have a strong influence on the kinetics of thin film reactions. The authors have investigated the effect of Cu on the kinetics of formation and microstructure of Al//3Ti in the temperature range of 375 degree -450 degree C. They found that the presence of 1 weight percent Cu in the Al changes both the activation energy and the pre-exponential factor of the growth law. At the same time, the Cu influences the microstructure of the growing Al//3Ti phase and smoothens the reaction interface. The results are discussed in terms of possible diffusion mechanisms in Al//3Ti.
J. Tersoff
Applied Surface Science
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Journal of Applied Mechanics, Transactions ASME
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Rheologica Acta
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MRS Fall Meeting 2020