D.P. DiVincenzo, R. Mosseri, et al.
Physical Review B
The recombination lifetime in phosphorus-doped hydrogenated amorphous silicon is determined from the dispersive photocurrent decay following a short-pulse excitation. The electron drift mobility and dispersion parameter α are obtained as well. It is found that α is temperature dependent as expected for extended-state transport controlled by multiple trapping. A lower limit to the extended-state mobility is determined: μc>~1 cm2/V.s. © 1980 The American Physical Society.
D.P. DiVincenzo, R. Mosseri, et al.
Physical Review B
B.L. Crowder, R.S. Title, et al.
Applied Physics Letters
M.H. Brodsky, D. Kaplan, et al.
Applied Physics Letters
S. Petersson, J.A. Reimer, et al.
Journal of Applied Physics