Design of a positive resist for projection lithography in the mid‐UV

The design, synthesis, formulation, and process optimization of a new mid‐UV resist are described. The synthesis of a spectrally matched sensitizer was guided by semiempirical quantum mechanical calculations that predict the effect of structural changes on optical absorption characteristics. The formulation was guided by computer profile simulation studies and the process development by a response surface analytical procedure. These techniques allowed formulation optimization to be achieved on the basis of an understanding of the complex interactions between the resist dissolution response functions and the modulation transfer function of the exposure tool for which the resist was designed. Copyright © 1983 Society of Plastics Engineers, Inc.