Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
We demonstrate that a large fraction of the available data relating the critical current density J, of superconducting Nb-A1Ox-Nb tunnel junctions to oxidation parameters can be accounted for by a single, nearly universal dependence. For fixed oxidation temperature, J, does not depend independently on oxygen partial pressure and oxidation time, but only on their product. There are two distinct regimes in this dependence, corresponding to high and low Jc. © 1995 IEEE
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
T.N. Morgan
Semiconductor Science and Technology
A. Nagarajan, S. Mukherjee, et al.
Journal of Applied Mechanics, Transactions ASME