M.A. Lutz, R.M. Feenstra, et al.
Surface Science
The density of states in heavily doped silicon can be derived from the electronic effect on a shear elastic constant. The density of states found in this way confirms the anomalous values obtained from specific heat measurements. © 1979.
M.A. Lutz, R.M. Feenstra, et al.
Surface Science
J.H. Stathis, R. Bolam, et al.
INFOS 2005
Ming L. Yu
Physical Review B
K.N. Tu
Materials Science and Engineering: A