Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
For the giant 4d photoabsorption of La, both the total photoabsorption spectrum and the N4.5-derived Auger emission intensity spectrum increase significantly above hν ≅ 112 eV, with spectral peaks at hν = 118 and 119 eV, respectively. However, the predominant 4d photoemission partial cross section shows a delayed onset of ∼ 4 eV, with a peak at hν = 121 eV, while the 5s, 5p, and 5d partial cross sections all show a strong resonant enhancement at lower energies, with spectral peaks at hν = 116.6 eV. These results are compared with a recent many-body calculation for Ce. The photon energy dependence of the La 4d 5 2/4d 3 2 photo-emission branching ratio is consistent with a "final-state model.". © 1981.
Joy Y. Cheng, Daniel P. Sanders, et al.
SPIE Advanced Lithography 2008
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP