P.G. McMullin, J.M. Blum, et al.
IEEE JQE
Paper
Degradation-induced microwave oscillations in double-heterostructure injection lasers
Abstract
Microwave oscillations in the light output of mesa-stripe GaAsSingle Bond signGa1-xAlxAs double-heterostructure lasers have been observed after degradation. The same lasers showed no oscillations before degradation. The experimental evidence indicates that the oscillations are caused by repetitive Q switching, with dark-line regions in the degraded units acting as saturable absorbers. © 1974 American Institute of Physics.