A. Krol, C.J. Sher, et al.
Surface Science
The use of a dedicated chamber to perform pre-epi deposition cleaning allows native oxide removal with a low thermal budget, and significantly improves throughput of low-temperature Si and SiGe applications. Wafers processed in the cleaning chamber show no detectable contaminants, and the cleansed surface is actually significantly smoother because of cleaning down to a sub-angstrom level.
A. Krol, C.J. Sher, et al.
Surface Science
R. Ghez, J.S. Lew
Journal of Crystal Growth
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
M.A. Lutz, R.M. Feenstra, et al.
Surface Science