J.B. Maxson, D.E. Savage, et al.
Physical Review Letters
Paper
Decomposition of interfacial SiO2 during HfO2 deposition
Abstract
The removal of interfacial silicon dioxide due to the growth of HfO 2 by Hf deposition in an oxidizing ambient was investigated. The involvement of oxygen transport through HfO2 layer was shown by medium-energy ion scattering results. Oxygen vacancy reactions were held responsible for the temperature dependence of silica reduction.