William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
Disorder in amorphous semiconductors results in unusual properties of dc conductivity. We demonstrate a quantitative description of the temperature dependence of conductivity in a-Si. The universal activation energy dependence of the conductivity prefactor (the Meyer-Neldel rule) is reproduced. Excellent agreement with experimental results is obtained by describing disorder and defects using the general thermodynamic ensemble theory for the structure of disordered systems. © 1988 The American Physical Society.
William Hinsberg, Joy Cheng, et al.
SPIE Advanced Lithography 2010
T.N. Morgan
Semiconductor Science and Technology
R.W. Gammon, E. Courtens, et al.
Physical Review B
R. Ghez, J.S. Lew
Journal of Crystal Growth