A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
Disorder in amorphous semiconductors results in unusual properties of dc conductivity. We demonstrate a quantitative description of the temperature dependence of conductivity in a-Si. The universal activation energy dependence of the conductivity prefactor (the Meyer-Neldel rule) is reproduced. Excellent agreement with experimental results is obtained by describing disorder and defects using the general thermodynamic ensemble theory for the structure of disordered systems. © 1988 The American Physical Society.
A. Gupta, R. Gross, et al.
SPIE Advances in Semiconductors and Superconductors 1990
John G. Long, Peter C. Searson, et al.
JES
Robert W. Keyes
Physical Review B
R. Ghez, M.B. Small
JES