Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A current-driven switching of magnetic state is observed in manganite trilayer junctions. The switching current threshold Ic depends on applied magnetic field. The switching is due to the transfer of spin-momentum from spin-polarized carriers to a ferromagnetic cluster situated between the electrodes. A model developed based on the spin-momentum transfer process quantitatively describes the experimental observation.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
R. Ghez, M.B. Small
JES
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
Lawrence Suchow, Norman R. Stemple
JES