Cryogenic InGaAs HEMTs with Reduced On-resistance using Strained Ohmic Contacts

We have demonstrated InGaAs HEMTs with cryo-optimized tensile strained Ohmic contacts, for low-power qubit readout. The HEMTs achieved a record-low value of R$_C$ of 30.6 Ω·μm, R$_{ON}$ of 290 Ω·μm, and the noise indication factor, √IDS/gm, of 0.18 √Vmm/S, at the lowest power consumption reported in cryogenic low-noise HEMTs.