Conference paper
Investigations of silicon nano-crystal floating gate memories
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
A theory of multiplet hole splittings of core‐electron binding energies in transition‐metal ions is developed including correlation effects. Correlation effects are found to be important for understanding the magnitude and intensity ratios of the observed splittings. New multiplet structure is predicted for the 3s multiplets, a structure which does not exist in any rigorous one‐electron theory and which has now been observed by Kowalczyk et al. Copyright © 1973 John Wiley & Sons, Inc.
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
G. Will, N. Masciocchi, et al.
Zeitschrift fur Kristallographie - New Crystal Structures
T.N. Morgan
Semiconductor Science and Technology
William G. Van der Sluys, Alfred P. Sattelberger, et al.
Polyhedron