The DX centre
T.N. Morgan
Semiconductor Science and Technology
The time-evolution of the photoluminescence from a GaAs/GaAlAs multi quantum well structure is studied using picosecond time-resolved spectroscopy in magnetic fields up to 25 T and under almost resonant excitation. Ultra short rise-times of 10-30 ps are found, while the observed decay consists of a fast component of 20-60 ps due to stimulated emission, and a slow component due to spontaneous emission of about 200 ps. From the magnetic field dependence of both the rise- and decay-time it is found that the carrier cooling rate due to phonon emission decreases with increasing magnetic field. © 1989.
T.N. Morgan
Semiconductor Science and Technology
R.M. Macfarlane, R.L. Cone
Physical Review B - CMMP
J. Tersoff
Applied Surface Science
P.C. Pattnaik, D.M. Newns
Physical Review B