L.T. Shi
Materials Science and Engineering
Volterra edge dislocations were introduced in an amorphous Lennard-Jones model. By application of suitable boundary conditions, equivalent to a shear stress, a recognizable step with a shape of a double-headed asymptote was formed on the other side of the amorphous solid. This suggests that atomic transport via dislocation motion can occur and could be the mechanism of shear-band formation in real amorphous materials. © 1983 The American Physical Society.
L.T. Shi
Materials Science and Engineering
J. Mannhart, R.P. Huebener, et al.
Physica A: Statistical Mechanics and its Applications
L.T. Shi, W. Krakow
Physical Review B
C. Rossel, P. Chaudhari
Physica C: Superconductivity and its applications