Yu. Ya. Divin, J. Mygind, et al.
IEEE TAS
Volterra edge dislocations were introduced in an amorphous Lennard-Jones model. By application of suitable boundary conditions, equivalent to a shear stress, a recognizable step with a shape of a double-headed asymptote was formed on the other side of the amorphous solid. This suggests that atomic transport via dislocation motion can occur and could be the mechanism of shear-band formation in real amorphous materials. © 1983 The American Physical Society.
Yu. Ya. Divin, J. Mygind, et al.
IEEE TAS
P. Chaudhari, James Lacey, et al.
Nature
R.B. Laibowitz, R.H. Koch, et al.
Physica B+C
M. Yang, V. Chan, et al.
VLSI Technology 2004