Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
To extend previous work in the frequency domain, as a function of temperature, the forms of anelastic or dielectric loss peaks are computed directly involving a Gaussian distribution of activation energies. The calculations provide the height, width, asymmetry, and frequency‐shift behavior of the loss peak as a function of a dimensionless parameter defining the width of the distribution. The calculations are used to determine how well the input distribution can be recovered or deconvoluted from a set of peaks, obtained for several different frequencies, by a simple empirical procedure termed a cross‐cut analysis. The procedure is found to work well for peaks whose width is more than twice the Debye width. Copyright © 1987 WILEY‐VCH Verlag GmbH & Co. KGaA
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
T.N. Morgan
Semiconductor Science and Technology
Corneliu Constantinescu
SPIE Optical Engineering + Applications 2009