PaperSurface core-level binding-energy shifts for the cleaved GaP(110) surfaceA.B. McLean, R. LudekePhysical Review B
PaperElectronic properties of nascent GaP(110) noble-metal interfacesR. Ludeke, A.B. McLean, et al.Physical Review B
PaperOccupied surface-state bands of Bi(1×1) overlayers on an InAs(110) surface grown by molecular-beam epitaxyD.N. McIlroy, D. Heskett, et al.Physical Review B
PaperSurface core-level shifts for the (110) cleavage face of III-V semiconductors: InAs(110)A.B. McLeanJournal of Physics Condensed Matter
