Comment on carrier-concentration dependence of critical superconducting current induced by the proximity effect in silicon

It is pointed out that effect of an applied gate voltage on the critical current observed in a gate-controlled Si-coupled weak link by Nishino, Yamada, and Kawabe [Phy. Rev. B 33, 2042 (1986)] is much larger than that expected from the small change of carrier density in the link. © 1987 The American Physical Society.