Solomon Assefa, Fengnian Xia, et al.
GFP 2010
A compact waveguide-integrated Germanium-on-insulator (GOI) photodetector with 10 ± 2fF capacitance and operating at 40Gbps is demonstrated. Monolithic integration of thin single-crystalline Ge into frontend CMOS stack was achieved by rapid melt growth during source-drain implant activation anneal. ©2010 Optical Society of America.
Solomon Assefa, Fengnian Xia, et al.
GFP 2010
Michael L. Cooper, Greeshma Gupta, et al.
CLEO 2011
Christopher Kang, Sharon M. Weiss, et al.
Optics Letters
William M. J. Green, Fengnian Xia, et al.
SPIE Photonics West 2008