Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We have implemented a new approach for measuring the pulse I-V characteristics of a set of nominally identical MOSFETs. In this scheme, all high speed signals are contained entirely inside the test structure itself. Only DC inputs and outputs are required for direct measurement of both DC and AC I-V characteristics at frequencies up to the GHz range. © 2005 IEEE.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
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IRPS 2018
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Stas Polonsky, Keith A. Jenkins
ISDRS 2003