M. Hargrove, S.W. Crowder, et al.
IEDM 1998
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
M. Hargrove, S.W. Crowder, et al.
IEDM 1998
Shaoning Yao, Wei-Tsu Tseng, et al.
ADMETA 2011
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
Lawrence Suchow, Norman R. Stemple
JES