F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
F.J. Himpsel, T.A. Jung, et al.
Surface Review and Letters
D.D. Awschalom, J.-M. Halbout
Journal of Magnetism and Magnetic Materials
Julien Autebert, Aditya Kashyap, et al.
Langmuir
Michael Ray, Yves C. Martin
Proceedings of SPIE - The International Society for Optical Engineering