Sung Ho Kim, Oun-Ho Park, et al.
Small
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Sung Ho Kim, Oun-Ho Park, et al.
Small
Mark W. Dowley
Solid State Communications
Ming L. Yu
Physical Review B
R.W. Gammon, E. Courtens, et al.
Physical Review B