Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
Q.R. Huang, Ho-Cheol Kim, et al.
Macromolecules
Sung Ho Kim, Oun-Ho Park, et al.
Small
S.F. Fan, W.B. Yun, et al.
Proceedings of SPIE 1989
M.A. Lutz, R.M. Feenstra, et al.
Surface Science