E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
The microscopic structure and electronic properties of amorphous silicon carbide at stoichiometric composition have been investigated with ab-initio molecular dynamics simulations. Our results show that a-SiC can be classified neither as chemically ordered nor as completely random and has a structure much more complex that commonly believed. Our data also indicate that a detailed analysis of each atomic species is crucial to the understanding of the material properties. © 1993.
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Arvind Kumar, Jeffrey J. Welser, et al.
MRS Spring 2000
Kafai Lai, Alan E. Rosenbluth, et al.
SPIE Advanced Lithography 2007
P.C. Pattnaik, D.M. Newns
Physical Review B