H.D. Dulman, R.H. Pantell, et al.
Physical Review B
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<3GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements. © 2011 IEEE.
H.D. Dulman, R.H. Pantell, et al.
Physical Review B
Julian J. Hsieh
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
E. Babich, J. Paraszczak, et al.
Microelectronic Engineering
Fernando Marianno, Wang Zhou, et al.
INFORMS 2021