S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
We present a physics-based model for nonlinear analysis of InGaAs/InP modified uni-traveling carrier (MUTC) photodiodes. At low frequencies (<3GHz), the Franz-Keldysh effect has been identified as the primary nonlinear mechanism in these MUTC photodiodes. The output third-order intercept point (OIP3) is used as a figure of merit for characterizing the nonlinear intermodulation distortion. The OIP3 behavior of the photodiode simulated using this model agrees well with measurements. © 2011 IEEE.
S. Cohen, J.C. Liu, et al.
MRS Spring Meeting 1999
J.K. Gimzewski, T.A. Jung, et al.
Surface Science
Sung Ho Kim, Oun-Ho Park, et al.
Small
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials