Characterization and Analysis of Random Telegraph Noise in Scaled SiGe Channel HKMG pMOSFETs

Here for the first time, we report on the characterization and analysis of random telegraph noise (RTN) in silicon-germanium (SiGe) channel pMOSFETs without a silicon-cap layer. A detailed analysis of traps causing two-level RTN is presented. The trap parameters and RTN magnitude are computed. It was observed that the impact of RTN is similar when compared with silicon channel pFETs from a similar process node with a comparable {T} {\text{inv}}.