Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
We have observed an electric-field-induced change in the dimensionality of excitons in superlattices, from three to quasi-two dimensions. The exciton binding energy of a (40 AIS)/(40 AIS) GaAs/(GaAl)As superlattice, determined from low-temperature photocurrent experiments, increases more than 6 meV by the action of an electric field perpendicular to the superlattice layers. This sharp increase, from nearly the bulk value of GaAs at very low fields to the isolated-quantum-well value at high fields, is a direct consequence of the Stark localization of electrons and holes in superlattices. © 1990 The American Physical Society.
Shu-Jen Han, Dharmendar Reddy, et al.
ACS Nano
J.V. Harzer, B. Hillebrands, et al.
Journal of Magnetism and Magnetic Materials
Elizabeth A. Sholler, Frederick M. Meyer, et al.
SPIE AeroSense 1997
P. Martensson, R.M. Feenstra
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films