Shu Jen Han
EDSSC 2016
Both theoretical and recent experimental results indicate that CNTs could potentially offer several times better performance over advanced silicon technologies [1], due to their high mobility, small intrinsic capacitance, and atomically smooth ultra-thin body. Great progress in CNT nanoelectronics has been made during the past decade and currently the maior research interest has shifted from demonstrating simple proof-of-concept device operations toward practical matters of the manufacturability in a large-scale.