Atomic structures of the tips of ultra-thin twins generated in InP by(001) homoepitaxial growth

The homoepitaxial growth of InP on a prepared InP(001) substrate, having initially a surface covered by ⟨110⟩-oriented ridges, can produce planar defects originating from the ridge region. A high-resolution electron microscopy (HREM) investigation of these defects has been undertaken, showing that a high density of stacking faults and ultra-thin [Sgrave] = 3 twins are present. A detailed characterization of the (111) extended twin facets is performed using simulations of the HREM images. Two consecutive twin tips can be linked an intrinsic fault bridge limited two 1/6⟨110⟩ dislocations. Other tips have a 1/6⟨112⟩ total Burgers vector content. © 1994 Taylor & Francis Group, LLC.