J.Z. Sun
Journal of Applied Physics
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
J.Z. Sun
Journal of Applied Physics
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MRS Spring Meeting 1999
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Physica B: Physics of Condensed Matter
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IEEE T-MTT