Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Selective protection of the porosity can be implemented in porous materials processing by using an organic polymer fill. This strategy is employed to protect ultralow-k (ULK) materials during patterning of 250-nm lines and spaces. Structures with significantly less sidewall and trench bottom damage are obtained, proving the potential of this novel approach in materials science. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Min Yang, Jeremy Schaub, et al.
Technical Digest-International Electron Devices Meeting
Oliver Schilter, Alain Vaucher, et al.
Digital Discovery
Heinz Schmid, Hans Biebuyck, et al.
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Ellen J. Yoffa, David Adler
Physical Review B