British Journal of Applied Physics

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20 Nov 2002

Annealing of residual stress in silicon monoxide films [1]

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Abstract

No abstract available.

Paper

Formation of thin film circuits using preferential nucleation

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Solid-State Electronics

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Superconducting properties of AuPb₃ and AuPb₂

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Characteristics of the annealing kinetics of tin films deposited at 88°K

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Journal of Applied Physics

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Influence of oxygen on the surface mobility of tin atoms in thin films

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